公开(公告)号：US20230418222A1

公开(公告)日：2023-12-28

申请号：US18199035

申请日：2023-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungki LEE ,  Giljong KIM ,  Hakdoo KIM ,  Donggeun HUR ,  Yoonsu KIM

IPC: G03G21/20 ,  G03G15/10

CPC classification number: G03G21/206 ,  G03G15/10 ,  G03G2215/00379 ,  G03G2215/0658

Abstract: A developing apparatus includes a body; a buffer plate on the body and including a gas flow path; a vacuum plate on an upper surface of the buffer plate and having a gas supply hole in fluid communication with the gas flow path; and a slit block on an edge of the vacuum plate, the slit block and the vacuum plate forming a flow path for gas from the gas supply hole, wherein a substrate is holdable on the vacuum plate, a contact area between the substrate and the vacuum plate being 90% or more of an area of the substrate, the slit block and the vacuum plate form a buffer space and an inclined first flow path in fluid communication with the buffer space, and the slit block and an edge of the substrate forms a second flow path in fluid communication with the first flow path.