公开(公告)号：US20250105127A1

公开(公告)日：2025-03-27

申请号：US18659864

申请日：2024-05-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dohyun KIM ,  Yeongseon KIM ,  JUHYEON KIM ,  HYOEUN KIM ,  SUNKYOUNG SEO ,  Haksun LEE

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/48 ,  H01L23/528 ,  H01L23/544 ,  H01L25/10

Abstract: A semiconductor package may include a first dielectric structure, a first pad in the first dielectric structure, a first semiconductor chip provided on the first dielectric structure, and a bump electrically connected to the first pad. The first semiconductor chip includes: a first substrate; a first chip dielectric layer in contact with the first dielectric structure; and a first chip pad in contact with a top surface of the first pad. The first pad may be provided between the bump and the first chip of the first semiconductor chip. The first pad may include a first conductive layer and a second conductive layer covered by the first conductive layer. The bump may be positioned closer to the first conductive layer than to the second conductive layer.