SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:US20220020803A1

    公开(公告)日:2022-01-20

    申请号:US17190796

    申请日:2021-03-03

    Abstract: A semiconductor device including: a first substrate including a first surface and a second surface; a first inter-wiring insulating film on the first substrate; a first wiring in the first inter-wiring insulating film; a landing via in the first inter-wiring insulating film, and spaced apart from the first wiring; a second substrate including a third surface and a fourth surface; a second inter-wiring insulating film on the second substrate; a second wiring in the second inter-wiring insulating film; and a through via structure penetrating the second substrate and the second inter-wiring insulating film, and electrically connecting the second wiring to the landing via, wherein with respect to the second surface of the first substrate, a top surface of the landing via is higher than a bottom surface of the first wiring, and a bottom surface of the landing via is lower than the bottom surface of the first wiring.

    IMAGE SENSOR AND A METHOD OF FABRICATING THE SAME

    公开(公告)号:US20240234472A1

    公开(公告)日:2024-07-11

    申请号:US18582945

    申请日:2024-02-21

    Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

    IMAGE SENSOR AND A METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210335877A1

    公开(公告)日:2021-10-28

    申请号:US17138112

    申请日:2020-12-30

    Abstract: An image sensor including: a substrate which includes a first surface and a second surface opposite each other; a plurality of pixels, each pixel including a photoelectric conversion layer in the substrate; a pixel separation pattern disposed in the substrate and separating the pixels; a surface insulating layer disposed on the first surface of the substrate; conductor contacts disposed in the surface insulating layer; and a grid pattern disposed on the surface insulating layer, wherein the pixel separation pattern includes a first portion and a second portion arranged in a direction parallel to the first surface of the substrate, and the conductor contacts are interposed between the first portion of the pixel separation pattern and the grid pattern and are not interposed between the second portion of the pixel separation pattern and the grid pattern.

    IMAGE SENSOR
    4.
    发明申请

    公开(公告)号:US20250098345A1

    公开(公告)日:2025-03-20

    申请号:US18642333

    申请日:2024-04-22

    Abstract: An image sensor includes a substrate; a plurality of unit pixel regions in the substrate, each unit pixel region o including a floating diffusion region and a transfer gate electrode; and a microlens on the substrate. The transfer gate electrode includes a first connection part on a first surface of the substrate and a first extending part connected to the first connection part and extending from the first surface into the substrate. A third surface of the first extending part has a first angle with respect to the first surface of the substrate and a fourth surface of the first extending part has a second angle with respect to the first surface of the substrate. The fourth surface, the third surface, and the floating diffusion region are sequentially disposed in a direction parallel to the first surface of the substrate, and the first angle is greater than the second angle.

    IMAGE SENSOR
    5.
    发明申请

    公开(公告)号:US20220109016A1

    公开(公告)日:2022-04-07

    申请号:US17405517

    申请日:2021-08-18

    Abstract: An image sensor is provided. An image sensor includes: a substrate including an active pixel sensor region, an optical black sensor region, and a boundary region provided between the active pixel sensor region and the optical black sensor region; a photoelectric conversion element provided inside the substrate on the boundary region; a passivation layer provided on the substrate; a grid trench formed on the boundary region of the substrate and extending from an upper surface of the passivation layer toward an inside of the passivation layer; grid patterns, each of the grid patterns being provided on the passivation layer on each of the active pixel sensor region and the boundary region of the substrate, at least a part of a grid pattern being provided inside the grid trench; and a color filter provided between the grid patterns.

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