公开(公告)号：US20230021228A1

公开(公告)日：2023-01-19

申请号：US17945921

申请日：2022-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Doo JEON ,  Han-Wool PARK ,  Se-Jin PARK ,  No-Young CHUNG

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66

Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.