公开(公告)号：US20240264932A1

公开(公告)日：2024-08-08

申请号：US18237735

申请日：2023-08-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghoon YOO ,  Wan-Soo CHOI ,  Hee Yeon TAK

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/7211

Abstract: A memory storage device is provided. The memory storage device includes: a memory device including a plurality of blocks, the plurality of blocks including a first block which includes a plurality of sub-blocks; and a memory controller configured to, based on use amount differences among the plurality of sub-blocks being greater than a threshold value, increase a use amount of a low use sub-block that has a small use amount from among the plurality of sub-blocks of the first block. The plurality of sub-blocks of the respective blocks are stacked in a direction perpendicular to a substrate of the memory device.