Method of forming pattern of semiconductor device from which various types of pattern defects are removed

    公开(公告)号:US10242921B2

    公开(公告)日:2019-03-26

    申请号:US15355193

    申请日:2016-11-18

    Abstract: The method includes classifying sample pattern data into a standard normal group and a standard weak group based on a first criterion. The method further includes extracting a normal group determination function by calculating an image parameter with respect to each piece of sample pattern data included in the standard normal group, and extracting a weak group determination function by calculating the image parameter with respect to each piece of sample pattern data included in the standard weak group. The method also includes classifying the object pattern data into a normal group and a weak group by calculating the image parameter with respect to object pattern data based on a first proximity between the normal group determination function and the object pattern data and a second proximity between the weak group determination function and the object pattern data.

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