公开(公告)号：US10903177B2

公开(公告)日：2021-01-26

申请号：US16511825

申请日：2019-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Jin Yoo ,  Hong-Sub Joo ,  Won-Gil Han

IPC: H01L21/00 ,  H01L25/00 ,  H01L23/00 ,  H01L23/60 ,  H01L21/56 ,  H01L25/18 ,  H01L23/31

Abstract: In a method of manufacturing a semiconductor package, a first semiconductor device is arranged on a package substrate. An electrostatic discharge structure is formed on at least one ground substrate pad exposed from an upper surface of the package substrate. A plurality of second semiconductor devices is stacked on the package substrate and spaced apart from the first semiconductor device, the electrostatic discharge structure being interposed between the first semiconductor device and the plurality of second semiconductor devices. A molding member is formed on the package substrate to cover the first semiconductor device and the plurality of second semiconductor devices.

公开(公告)号：US11594500B2

公开(公告)日：2023-02-28

申请号：US17132880

申请日：2020-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se-Jin Yoo ,  Hong-Sub Joo ,  Won-Gil Han

IPC: H01L23/00 ,  H01L25/00 ,  H01L23/60 ,  H01L21/56 ,  H01L25/18 ,  H01L23/31

Abstract: In a method of manufacturing a semiconductor package, a first semiconductor device is arranged on a package substrate. An electrostatic discharge structure is formed on at least one ground substrate pad exposed from an upper surface of the package substrate. A plurality of second semiconductor devices is stacked on the package substrate and spaced apart from the first semiconductor device, the electrostatic discharge structure being interposed between the first semiconductor device and the plurality of second semiconductor devices. A molding member is formed on the package substrate to cover the first semiconductor device and the plurality of second semiconductor devices.