公开(公告)号：US20170117190A1

公开(公告)日：2017-04-27

申请号：US15193805

申请日：2016-06-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won-Keun CHUNG ,  Hu-Yong LEE ,  Taek-Soo JEON ,  Sang-Jin HYUN

IPC: H01L21/8238 ,  H01L29/49 ,  H01L29/66 ,  H01L27/092

CPC classification number: H01L21/823842 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66545

Abstract: A semiconductor device includes a first trench and a second trench, a liner pattern along a portion of side surfaces and along bottom surfaces of the first and the second trenches, respectively, a work function metal in the first and the second trenches and on the liner pattern, respectively, a first barrier metal in the first trench and on the work function metal, and having a first thickness, a second barrier metal in the second trench and on the work function metal, and having a second thickness thicker than the first thickness, and a first fill metal on the first barrier metal.