公开(公告)号：US10153170B2

公开(公告)日：2018-12-11

申请号：US15416574

申请日：2017-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwa Jin Jang ,  Jae Young Park ,  Sun Young Lee ,  Ha Kyu Seong ,  Han Mei Choi

IPC: H01L21/3065 ,  H01L21/84 ,  H01L21/263 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66

Abstract: A method of fabricating a semiconductor device is provided. The method includes forming a first fin structure which includes first semiconductor patterns and second semiconductor patterns stacked alternately on a substrate and extends in a first direction, forming an exposed first wire pattern group which includes the second semiconductor patterns by removing the first semiconductor patterns, heat-treating the exposed first wire pattern group, and forming a first gate electrode which surrounds the first wire pattern group and extends in a second direction different from the first direction.