公开(公告)号：US20200161339A1

公开(公告)日：2020-05-21

申请号：US16525776

申请日：2019-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyejoo LEE ,  Minsu Kim

IPC: H01L27/12 ,  H01L27/092 ,  H01L21/84

Abstract: A semiconductor device includes a substrate, an insulating layer disposed on the substrate, and a first semiconductor structure and a second semiconductor structure disposed on the insulating layer. Each of the first and second semiconductor structures includes a gate electrode on the insulating layer, a plurality of channel layers that are surrounded by the gate electrode and stacked in a direction perpendicular to a top surface of the insulating layer, and a plurality of dielectric layers disposed between the gate electrode and the channel layers. The amount of the channel layers provided in the first semiconductor structure is greater than the amount of the channel layers provided in the second semiconductor structure.