公开(公告)号：US20230005947A1

公开(公告)日：2023-01-05

申请号：US17715508

申请日：2022-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyemin YOO ,  Woosung YANG ,  Sukkang SUNG ,  Ahreum LEE

IPC: H01L27/11573 ,  H01L23/528 ,  H01L23/535 ,  H01L27/11582

Abstract: A semiconductor device includes a first structure having first and second memory regions, an extension region therebetween, and word lines; and a second structure having a circuit region overlapping the extension region. The word lines include first and second common word lines at different levels, and first and second intermediate individual word lines at a same level and spaced apart. Each of the first and second common word lines are in the first and second memory regions and the extension region. The first intermediate individual word line is in the first memory region and extends into the extension region at a level between the first and second common word lines. The second intermediate individual word line is in the second memory region and extends into the extension region. The circuit region includes pass transistors connected to the word lines. A pass transistor overlaps the word lines in the extension region.