公开(公告)号：US20250140723A1

公开(公告)日：2025-05-01

申请号：US18671443

申请日：2024-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon KIM ,  Jinkyeong SEOL ,  Raeyoung KANG ,  Minki KIM ,  Hyeonkyu HA

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/065 ,  H10B80/00

Abstract: A semiconductor package includes a plurality of semiconductor chips bonded to each other through direct bonding, the plurality of semiconductor chips including a first semiconductor chip and a second semiconductor chip. The first semiconductor chip including: a front insulating layer bonded to a back insulating layer of the second semiconductor chip; a front pad surrounded by the front insulating layer; a device layer on a back surface of the front insulating layer and including an interconnection structure electrically connected to the front pad; a conductive pattern between the interconnection structure and the front pad; and a support insulating layer between the device layer and the front insulating layer and surrounding the conductive pattern, wherein a gap is between a first side surface of the support insulating layer and a second side surface of the conductive pattern that faces the first side surface.