公开(公告)号：US20250147690A1

公开(公告)日：2025-05-08

申请号：US18743963

申请日：2024-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-suk MOON ,  Bokyoung KIM ,  Hee Hyun NAM ,  Jinwoo SONG ,  Hyewon JEONG

IPC: G06F3/06

Abstract: An operating method of a storage device includes fetching, from an external host device, write command and write data, based on a 0-th fetch rate, storing the write data in a write cache region of a buffer memory device of the storage device, performing write cache processing with respect to the write cache region, based on a 0-th cache processing rate, the performing write cache processing including storing, in a nonvolatile memory device of the storage device, the write data of the write cache region, detecting a write cache level of the write cache region, and controlling the 0-th cache processing rate, based on the write cache level.