公开(公告)号：US20200020610A1

公开(公告)日：2020-01-16

申请号：US16265466

申请日：2019-02-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYEONG BIN LIM ,  Sung Hyup KIM ,  Hyo Ju KIM ,  Ho Chang LEE ,  Jeong Min NA

IPC: H01L23/48 ,  H01L23/532 ,  H01L25/065 ,  H01L21/768 ,  H01L21/02

Abstract: A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to −100 MPa.

公开(公告)号：US20210384107A1

公开(公告)日：2021-12-09

申请号：US17407372

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeong Bin LIM ,  Sung Hyup KIM ,  Hyo Ju KIM ,  Ho Chang LEE ,  Jeong Min NA

IPC: H01L23/48 ,  H01L23/532 ,  H01L25/065 ,  H01L21/768 ,  H01L21/02

Abstract: A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to −100 MPa.