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1.发明申请METHOD OF FORMING HYBRID NANOSTRUCTURE ON GRAPHENE, HYBRID NANOSTRUCTURE, AND DEVICE INCLUDING THE HYBRID NANOSTRUCTURE 审中-公开在石墨，混合纳米结构和包含混合纳米结构的装置中形成混合纳米结构的方法公开(公告)号：US20130153860A1
公开(公告)日：2013-06-20
申请号：US13710549
申请日：2012-12-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-woo KIM , Hyun-kyu PARK
IPC: H01L51/00
Abstract: A method of forming a hybrid nanostructure on graphene, the method including providing a graphene layer on a substrate; forming a metal layer on the graphene layer; and chemically depositing a nanomaterial on the graphene layer on which the metal layer is formed to form the hybrid nanostructure.
Abstract translation: 一种在石墨烯上形成杂化纳米结构的方法，所述方法包括在基底上提供石墨烯层; 在石墨烯层上形成金属层; 并在其上形成金属层的石墨烯层上化学沉积纳米材料以形成混合纳米结构。
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