-
公开(公告)号：US11508851B2
公开(公告)日：2022-11-22
申请号：US17004427
申请日：2020-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minhee Cho , Hyunmog Park , Minwoo Song , Woobin Song , Hyunsil Oh , Minsu Lee
Abstract: A semiconductor device includes: a substrate including an active region and a device isolation region; a flat plate structure formed on the substrate; an oxide semiconductor layer covering a top surface of the flat plate structure and continuously arranged on a top surface of the substrate in the active region and the device isolation region; a gate structure arranged on the oxide semiconductor layer and including a gate dielectric layer and a gate electrode; and a source/drain region arranged on both sides of the gate structure and formed in the oxide semiconductor layer, in which, when viewed from a side cross-section, an extending direction of the flat plate structure and an extending direction of the gate structure cross each other.
-
公开(公告)号：US20210217897A1
公开(公告)日：2021-07-15
申请号：US17004427
申请日：2020-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Minhee CHO , Hyunmog Park , Minwoo Song , Woobin Song , Hyunsil Oh , Minsu Lee
IPC: H01L29/786 , H01L27/12
Abstract: A semiconductor device includes: a substrate including an active region and a device isolation region; a flat plate structure formed on the substrate; an oxide semiconductor layer covering a top surface of the flat plate structure and continuously arranged on a top surface of the substrate in the active region and the device isolation region; a gate structure arranged on the oxide semiconductor layer and including a gate dielectric layer and a gate electrode; and a source/drain region arranged on both sides of the gate structure and formed in the oxide semiconductor layer, in which, when viewed from a side cross-section, an extending direction of the flat plate structure and an extending direction of the gate structure cross each other.
-
Search Results
2
records
(took 0.011 seconds)
