公开(公告)号：US20140011310A1

公开(公告)日：2014-01-09

申请号：US13921872

申请日：2013-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seok Min HWANG ,  Jae Yoon KIM ,  Je Won KIM ,  In Bum YANG ,  In Yong HWANG

IPC: H01L33/00

CPC classification number: H01L33/0095

Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes irradiating a laser into a substrate having a first surface and a second surface opposing each other to form at least one laser irradiation area on the substrate. A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer is formed on the substrate. The light emitting structure and the substrate is cut in a position corresponding to the laser irradiation area of the substrate, in a top surface of the light emitting structure, to separate the light emitting structure and the substrate into individual device units.

Abstract translation: 提供一种制造半导体发光器件的方法。 该方法包括将激光照射到具有彼此相对的第一表面和第二表面的基板中，以在基板上形成至少一个激光照射区域。 在基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构。 在发光结构的顶表面中，将发光结构和衬底切割成与衬底的激光照射区域相对应的位置，以将发光结构和衬底分离为各个器件单元。