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公开(公告)号:US20250169371A1
公开(公告)日:2025-05-22
申请号:US18676799
申请日:2024-05-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: KI WOONG KIM , JEONGCHUN RYU , KWANG SEOK KIM , SEONGGEON PARK , SEUNGJAE LEE
Abstract: A magnetic tunnel junction element including: a pinned layer and a free layer facing each other; a buffer layer on the pinned layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, wherein the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re or Ta, the auxiliary layer includes W, Mo, or Ta.