公开(公告)号：US20250169371A1

公开(公告)日：2025-05-22

申请号：US18676799

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KI WOONG KIM ,  JEONGCHUN RYU ,  KWANG SEOK KIM ,  SEONGGEON PARK ,  SEUNGJAE LEE

IPC: H10N50/10 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetic tunnel junction element including: a pinned layer and a free layer facing each other; a buffer layer on the pinned layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, wherein the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re or Ta, the auxiliary layer includes W, Mo, or Ta.