公开(公告)号：US20220231073A1

公开(公告)日：2022-07-21

申请号：US17717422

申请日：2022-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JI-WON LEE ,  Jeong-Jin Cho ,  Moo-Sup Lim ,  Sung-Young Seo ,  Hae-Won Lee

IPC: H01L27/146 ,  H04N5/3745

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.

公开(公告)号：US20210143204A1

公开(公告)日：2021-05-13

申请号：US17154421

申请日：2021-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JI-WON LEE ,  JEONG-JIN CHO ,  MOO-SUP LIM ,  SUNG-YOUNG SEO ,  HAE-WON LEE

IPC: H01L27/146

Abstract: This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.