公开(公告)号：US20220167492A1

公开(公告)日：2022-05-26

申请号：US17468644

申请日：2021-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIHOON NA ,  MUN JA KIM ,  JAEWHAN SUNG ,  BYUNGCHUL YOO ,  JIBEOM YOO ,  HAKSEOK LEE ,  MYEONGJIN JEONG ,  HYUNJUNE CHO

IPC: H05G2/00 ,  G02B5/08 ,  G02B5/20 ,  G03F7/20

Abstract: An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.