公开(公告)号：US20200083444A1

公开(公告)日：2020-03-12

申请号：US16424608

申请日：2019-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YONGJIN PARK ,  JUNHWAN PARK ,  DONGJUN SEONG ,  GYUHWAN OH ,  HYUNGJONG JEONG

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device includes a first conductive line disposed on a substrate, a second conductive line disposed on the first conductive line and intersecting the first conductive line, and a memory cell disposed between the first conductive line and the second conductive line. The memory cell includes a variable resistance pattern, and a heater electrode disposed on the variable resistance pattern. The heater electrode includes a through-hole penetrating the heater electrode. The through-hole exposes one surface of the variable resistance pattern.