公开(公告)号：US20210028360A1

公开(公告)日：2021-01-28

申请号：US16807245

申请日：2020-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtak KIM ,  Sangjine PARK ,  Wonjun LEE ,  Hyeyeong SEO ,  Jaeuk SHIN

IPC: H01L45/00

Abstract: A semiconductor device, includes: a first conductive structure on a substrate; a second conductive structure on the first conductive structure; and a first memory cell structure between the first conductive structure and the second conductive structure, wherein the first memory cell structure includes: a switching material pattern on the first conductive structure; a data storage material pattern on the switching material pattern; and an upper conductive pattern on the data storage material pattern, wherein a first width of a lower region of the data storage material pattern is less than a first width of the switching material pattern, and wherein a first width of the upper conductive pattern is less than a width of an upper region of the data storage material pattern.

公开(公告)号：US20210066588A1

公开(公告)日：2021-03-04

申请号：US16851206

申请日：2020-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeuk SHIN ,  Youngtak KIM ,  Sangjine PARK ,  Hyeyeong SEO ,  Wonjun LEE

IPC: H01L45/00 ,  H01L27/24

Abstract: A semiconductor device is provided including a plurality of first conductive patterns disposed on a substrate. A first insulating pattern is disposed between the plurality of first conductive patterns. A plurality of second conductive patterns is disposed on the plurality of first conductive patterns. A first memory cell structure is disposed between the plurality of first conductive patterns and the plurality of second conductive patterns. A second insulating pattern is disposed on the first insulating pattern and on a side surface of the first memory cell structure. A first vertical structure is disposed on the first insulating pattern and passing through the second insulating pattern to an upper surface of the substrate. The first insulating pattern has a plurality of recess portions. The plurality of recess portions include a first recess portion and a second recess portion. The first recess portion and the second recess portion have different depths.