公开(公告)号：US20220113889A1

公开(公告)日：2022-04-14

申请号：US17337992

申请日：2021-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewon PARK ,  Sangkil PARK ,  Jaehoon LEE

IPC: G06F3/06

Abstract: A method of testing a memory device, a memory built-in self-test (MBIST) circuit, and a memory device for improving reliability and reducing a test time. The memory device includes a plurality of memory banks and the MBIST circuit. The MBIST circuit is configured to generate double data rate (DDR) test patterns and parallel bit test (PBT) test patterns to test the memory banks. When a defective cell is detected as a result of the PBT test or the DDR test, the MBIST circuit is configured to perform a repair operation for replacing the defective cell with a redundancy cell and perform a re-test to verify the repair operation. The MBIST circuit may be configured to perform the DDR test on one or more memory cells including the defective cell during the re-test.