公开(公告)号：US20240429268A1

公开(公告)日：2024-12-26

申请号：US18651934

申请日：2024-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taekyun KIM ,  Jaewon SHIM ,  Jaejin CHUNG

IPC: H01G4/06

Abstract: A semiconductor device includes a capacitor including a first electrode, a second electrode, and a dielectric layer between the first electrode and the second electrode, where at least one of the first electrode and the second electrode includes a nanolaminate electrode, the nanolaminate electrode includes a plurality of first material layers and a plurality of second material layers, the plurality of first material layers and the plurality of second material layers being alternately arranged, the plurality of first material layers includes indium oxide (In2O3), the plurality of second material layers includes molybdenum oxide (MoOx), each of the plurality of first material layers has a thickness between about 2 angstroms to about 6 angstroms, and each of the plurality of second material layers includes a monolayer of molybdenum oxide.