公开(公告)号：US20250006765A1

公开(公告)日：2025-01-02

申请号：US18758732

申请日：2024-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jehyung RYU ,  Hajin Lim ,  Taeksoo Jeon

IPC: H01L27/146

Abstract: An image sensor is provided. The image sensor includes a semiconductor substrate including a first surface, and a second surface opposite to the first surface, the semiconductor substrate further including a photoelectric conversion region; a transmission gate disposed on the first surface of the semiconductor substrate; a buried insulation layer disposed on the first surface of the semiconductor substrate to cover the transmission gate; and a pixel isolation structure disposed in a pixel isolation trench, the pixel isolation trench extending toward the second surface of the semiconductor substrate from the first surface of the semiconductor substrate and passing through the buried insulation layer, the pixel isolation structure defining a plurality of pixels in the semiconductor substrate, a portion of the pixel isolation structure being covered by the buried insulation layer.