公开(公告)号：US10811079B2

公开(公告)日：2020-10-20

申请号：US16268807

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Min Park ,  Dae Sun Kim ,  In Cheol Nam ,  Chang Soo Lee ,  Jin Seok Jeong

IPC: G11C11/4074 ,  G11C11/4096 ,  G11C11/408

Abstract: A semiconductor memory apparatus includes a memory cell unit and an internal voltage stabilization apparatus. The memory cell unit includes a row decoder, a column decoder, and a memory cell array. The internal voltage stabilization apparatus includes an operation termination determination unit configured to determine whether an operation of the semiconductor memory apparatus is terminated on the basis of an external input voltage and output an operation termination command, a termination voltage generation unit configured to generate a termination voltage having a preset voltage value on the basis of a determination result of operation termination by the operation termination determination unit, and a switch unit. The switch unit includes a plurality of switches that are turned in response to the operation termination command, and supplies the termination voltage, input from the termination voltage generation unit, to a plurality of internal nodes of the memory cell array.

公开(公告)号：US20200111520A1

公开(公告)日：2020-04-09

申请号：US16268807

申请日：2019-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan Min Park ,  Dae Sun Kim ,  In Cheol Nam ,  Chang Soo Lee ,  Jin Seok Jeong

IPC: G11C11/4074 ,  G11C11/408 ,  G11C11/4096

Abstract: A semiconductor memory apparatus includes a memory cell unit and an internal voltage stabilization apparatus. The memory cell unit includes a row decoder, a column decoder, and a memory cell array. The internal voltage stabilization apparatus includes an operation termination determination unit configured to determine whether an operation of the semiconductor memory apparatus is terminated on the basis of an external input voltage and output an operation termination command, a termination voltage generation unit configured to generate a termination voltage having a preset voltage value on the basis of a determination result of operation termination by the operation termination determination unit, and a switch unit. The switch unit includes a plurality of switches that are turned in response to the operation termination command, and supplies the termination voltage, input from the termination voltage generation unit, to a plurality of internal nodes of the memory cell array.