公开(公告)号：US20250068559A1

公开(公告)日：2025-02-27

申请号：US18590574

申请日：2024-02-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woohyun KANG ,  Jinyoung LEE ,  Jisoo KIM ,  Sangkwon MOON ,  Hyunkyo OH ,  Donghoo LIM ,  Jin gu JEONG

IPC: G06F12/02

Abstract: A storage device includes a non-volatile memory device configured to store fast cell information obtained from a threshold voltage distribution formed through a one-shot program for memory cells; and a storage controller configured to read the fast cell information from the non-volatile memory device during booting or initialization to perform mapping a fast cell area based on a fast cell management policy, wherein the fast cell information is acquired through the one-shot program performed in a test stage or a mass production evaluation stage, and is stored in the non-volatile memory device before a firmware of the storage controller is executed.