公开(公告)号：US20220299874A1

公开(公告)日：2022-09-22

申请号：US17696030

申请日：2022-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon KOH ,  Tsunehiro NISHI ,  Hyunwoo KIM ,  Jinkyun LEE ,  Junil KIM ,  Hyuntaek OH ,  Jihoon WOO ,  Seungsoo CHOI

IPC: G03F7/038 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: A method of manufacturing a semiconductor device, the method including forming a photoresist material layer on a lower film, the photoresist material layer including a crosslinking molecule having a molecular weight of about 1,000 to about 4,000; exposing a partial region of the photoresist material layer; removing an unexposed portion of the photoresist material layer to form a photoresist pattern; and processing the lower film using the photoresist pattern, wherein the crosslinking molecule includes a perfluoro alkyl moiety, the perfluoro alkyl moiety including a carbon-fluorine bond that dissociates in response to the exposing of the partial region of the photoresist material layer.