公开(公告)号：US20220392520A1

公开(公告)日：2022-12-08

申请号：US17569679

申请日：2022-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daero KIM ,  Kyunghoi KOO ,  Sujeong KIM ,  Juyoung KIM ,  Sanghune PARK ,  Jiyeon PARK ,  Jihun OH ,  Kyoungwon LEE

IPC: G11C11/4096 ,  G11C11/4076

Abstract: A memory controller includes a first receiver configured to compare a read reference voltage with a piece of data received through a first data line and output a first piece of data; a first duty adjuster configured to adjust a duty of the first piece of data; a second receiver configured to compare the read reference voltage with a piece of data received through a second data line and output a second piece of data; a second duty adjuster configured to adjust a duty of the second piece of data; and a training circuit configured to perform a training operation on pieces of data received through a plurality of data lines, to obtain a target read reference voltage for each piece of data and correct a duty of each piece of data based on a level of the target read reference voltage for each piece of data.