公开(公告)号：US12156400B2

公开(公告)日：2024-11-26

申请号：US17740635

申请日：2022-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoonsung Choi ,  Jiyoung Yun

IPC: H01L27/112 ,  H10B20/20

Abstract: A semiconductor integrated circuit device includes a standard cell on a substrate, an one time programmable (OTP) memory structure at an edge portion of the standard cell, and a program transistor outside of the standard cell at a position adjacent to the edge portion of the standard cell at which the OTP memory structure is provided, the program transistor being electrically connected to the OTP memory structure. The OTP memory structure includes a first anti-fuse and a second anti-fuse. When a program voltage is applied to the program transistor and a bias power voltage is applied to the OTP memory structure, each of the first anti-fuse and the second anti-fuse becomes shorted and the bias power voltage is provided to the standard cell.

公开(公告)号：US20250167457A1

公开(公告)日：2025-05-22

申请号：US18926702

申请日：2024-10-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wan Choi ,  Hojun Rho ,  Jiyoung Yun

IPC: H01Q21/06 ,  H04B1/40 ,  H04B7/04

Abstract: Provided are a device for performing wireless communication to increase a data rate in a wireless communication system, an operating method of the device, and a wireless communication system including the device. A second device includes second antennas configured to transmit and receive radio frequency (RF) signals to and from a first device including first antennas in a wireless communication system, at least one RF chain configured to transmit and receive the RF signals to and from the second antennas, and a processing circuit configured to transmit and receive data signals to and from the at least one RF chain, wherein the processing circuit is further configured to adjust a spacing between the second antennas between the number of the first antennas, the number of the second antennas, and the number of the data signals.