公开(公告)号：US20210175073A1

公开(公告)日：2021-06-10

申请号：US17022198

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung-Min RYU ,  Jiyu CHOI ,  Gyu-Hee PARK ,  Younjoung CHO

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/08 ,  C23C16/30 ,  C07C211/08 ,  C01G19/00

Abstract: A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1: M2L1)n  [Chemical Formula 1] In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each L1 may independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R1, R2, R3, and R4 may each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.