公开(公告)号：US20150220283A1

公开(公告)日：2015-08-06

申请号：US14616153

申请日：2015-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Chu OH ,  JongHa KIM ,  Junjin KONG ,  Hong Rak SON

IPC: G06F3/06

CPC classification number: G06F3/0656 ,  G06F3/061 ,  G06F3/0679 ,  G06F12/00 ,  G06F12/0246

Abstract: An operating method of a nonvolatile memory device which includes receiving a plurality of sub-page data and a write command from an external device; performing a pre-main program operation such that at least one of the plurality of sub-page data is stored in the second plurality of memory cells included in the main region; performing a buffered program operation such that other received sub-page data is stored in the first plurality of memory cells included in the buffer region; and performing a re-main program operation such that the received sub-page data subjected to the buffered program operation at the buffer region is stored in the second plurality of memory cells subjected to the pre-main program operation.

Abstract translation: 一种非易失性存储器件的操作方法，包括从外部设备接收多个子页面数据和写入命令; 执行预主程序操作，使得所述多个子页数据中的至少一个存储在所述主区域中包括的所述第二多个存储单元中; 执行缓冲的程序操作，使得其他接收的子页数据存储在包括在缓冲区中的第一多个存储单元中; 以及执行重主程序操作，使得经受缓冲区域缓冲的程序操作的接收到的子页数据被存储在经受主程序编程操作的第二多个存储单元中。