公开(公告)号：US09785379B2

公开(公告)日：2017-10-10

申请号：US14616153

申请日：2015-02-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Chu Oh ,  JongHa Kim ,  Junjin Kong ,  Hong Rak Son

IPC: G06F3/06 ,  G06F12/00

CPC classification number: G06F3/0656 ,  G06F3/061 ,  G06F3/0679 ,  G06F12/00 ,  G06F12/0246

Abstract: An operating method of a nonvolatile memory device which includes receiving a plurality of sub-page data and a write command from an external device; performing a pre-main program operation such that at least one of the plurality of sub-page data is stored in the second plurality of memory cells included in the main region; performing a buffered program operation such that other received sub-page data is stored in the first plurality of memory cells included in the buffer region; and performing a re-main program operation such that the received sub-page data subjected to the buffered program operation at the buffer region is stored in the second plurality of memory cells subjected to the pre-main program operation.