SENSOR DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS USING THE SAME

    公开(公告)号:US20240412960A1

    公开(公告)日:2024-12-12

    申请号:US18404645

    申请日:2024-01-04

    Abstract: A sensor device includes a first substrate, a second substrate on the first substrate, a plurality of detection units between the first substrate and the second substrate and configured to collect detection information from plasma formed in a space above the second substrate, a controller configured to generate characteristic data representing characteristics of the plasma based on the detection information collected by the plurality of detection units, and a power supply unit including a radio frequency (RF) energy harvester configured to produce power for operation of at least one of the plurality of detection units and the controller from RF power used to form the plasma.

Patent Agency Ranking