公开(公告)号：US10916563B2

公开(公告)日：2021-02-09

申请号：US16453094

申请日：2019-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Woo Kim ,  Joon Young Kwon ,  Jung Hwan Lee ,  Jung Tae Sung ,  Ji Min Shin

IPC: H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor device includes a substrate having a cell region and an extension region, channel structures disposed in the cell region and extending in a first direction substantially perpendicular to an upper surface of the substrate, gate electrode layers surrounding the channel structures and stacked to be spaced apart from each other in the first direction and to extend in a second direction substantially perpendicular to the first direction, and word line cuts cutting the gate electrode layers in the first direction and continuously extending in the second direction. At least one of the word line cuts is an extension word line cut with an extension portion having an area that is different from those of the remaining word line cuts located at the same level as the at least one word line cut in a predetermined region extending in the second direction.