公开(公告)号：US20200083296A1

公开(公告)日：2020-03-12

申请号：US16685394

申请日：2019-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joyoung PARK ,  Seok-Won LEE ,  Seongjun SEO

IPC: H01L27/24 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/11519 ,  H01L27/11548 ,  H01L27/11565 ,  H01L27/11575 ,  H01L27/06

Abstract: A three-dimensional semiconductor device is provided as follows. A substrate includes a contact region, a dummy region, and a cell array region. A stack structure includes electrodes vertically stacked on the substrate. The electrodes are stacked to have a first stepwise structure on the contact region and a second stepwise structure in the dummy region. Ends of at least two adjacent electrodes in the second stepwise structure have first sidewalls vertically aligned so that horizontal positions of the first sidewalls are substantially the same.