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公开(公告)号:US10896881B2
公开(公告)日:2021-01-19
申请号:US16819413
申请日:2020-03-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Suk Ho Lee , Dong Joon Oh , Ju Suk Kang
IPC: H01L23/552 , H01L23/00 , H01L21/56 , H01L23/498
Abstract: A semiconductor package includes a frame having a first through-hole, a semiconductor chip disposed on the first through-hole an having an active surface on which a connection pad is disposed and an inactive surface, a first encapsulant covering at least a portion of the inactive surface and a side surface of the semiconductor chip, a connection structure disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pad of the semiconductor chip and a ground pattern layer, a side surface cover layer covering at least an outer side surface of the frame, and a metal layer disposed on the upper surface of the first encapsulant and extending downwardly along the side surface cover layer to cover the side surface cover layer and a portion of the side surface of the connection structure.
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公开(公告)号:US10607945B1
公开(公告)日:2020-03-31
申请号:US16542470
申请日:2019-08-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Suk Ho Lee , Dong Joon Oh , Ju Suk Kang
IPC: H01L23/552 , H01L23/00 , H01L23/498 , H01L21/56
Abstract: A semiconductor package includes a frame having a first through-hole, a semiconductor chip disposed on the first through-hole an having an active surface on which a connection pad is disposed and an inactive surface, a first encapsulant covering at least a portion of the inactive surface and a side surface of the semiconductor chip, a connection structure disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pad of the semiconductor chip and a ground pattern layer, a side surface cover layer covering at least an outer side surface of the frame, and a metal layer disposed on the upper surface of the first encapsulant and extending downwardly along the side surface cover layer to cover the side surface cover layer and a portion of the side surface of the connection structure.
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