公开(公告)号：US20250094281A1

公开(公告)日：2025-03-20

申请号：US18618856

申请日：2024-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghan Lee ,  Juhwan Lim ,  Sanghun Jun ,  Bumjun Kim

IPC: G06F11/10 ,  G06F1/30 ,  G06F13/40

Abstract: A storage system includes a plurality of DRAM-less storage devices, a CXL memory expander, and a PLP capacitor. The DRAM-less storage devices include nonvolatile memories as a storage medium, and a DRAM is omitted in the DRAM-less storage devices. The CXL memory expander is electrically connected to the DRAM-less storage devices, communicates through a CXL interface and operates as a buffer memory of the DRAM-less storage devices. The PLP capacitor is electrically connected to the DRAM-less storage devices and the CXL memory expander, is disposed outside the DRAM-less storage devices, and supplies an auxiliary power voltage to the DRAM-less storage devices and the CXL memory expander in a SPO condition in which an external power voltage is suddenly turned off.