公开(公告)号：US20230081402A1

公开(公告)日：2023-03-16

申请号：US17899832

申请日：2022-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanyeol PARK ,  Sejun PARK ,  Junhyoung CHO ,  Sejin KYUNG ,  Daewee KONG ,  Taemin KIM

IPC: H01L21/30

Abstract: A method of manufacturing a semiconductor device includes preparing a substrate including cell regions and a scribe lane region, forming circuit blocks in the cell regions of the substrate, the substrate including a first surface and a second surface, forming a bias pad on the first surface of the substrate, such that the bias pad is in the scribe lane region of the substrate, bonding a deuterium exchange structure to the second surface of the substrate, implanting deuterium into the deuterium exchange structure using plasma processing, and applying a first voltage to the bias pad, such that the deuterium is diffused from the deuterium exchange structure into the substrate through the second surface of the substrate.