公开(公告)号：US20220344285A1

公开(公告)日：2022-10-27

申请号：US17720435

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junsu JEON ,  Subin Kim ,  Byungmoo Kim

IPC: H01L23/60 ,  H01L23/00 ,  H01L23/58

Abstract: A semiconductor device includes a semiconductor substrate including a main chip region, a guard ring surrounding the main chip region, a moisture-proof ring surrounding the guard ring, an electrode structure in contact with the semiconductor substrate in the main chip region, and at least one metal pattern structure extending from the electrode structure to the moisture-proof ring. The at least one metal pattern structure is a connection line that grounds the moisture-proof ring.