公开(公告)号：US20250159911A1

公开(公告)日：2025-05-15

申请号：US18827024

申请日：2024-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YOSEOP LIM ,  KI-OK KIM ,  DONGKWAN HAN

IPC: H10B80/00 ,  H01L21/66 ,  H01L25/065

Abstract: A memory device is provided. The memory device includes: a first die; a second die electrically connected to the first die; a plurality of interconnections forming a signal transmission path between the first die and the second die; a plurality of flip-flops provided in the first die that are electrically connected to the plurality of interconnections; and a test circuit provided in the second die and electrically connected to the plurality of interconnections. The test circuit is configured to perform a test operation on the plurality of interconnections using the plurality of flip-flops.