公开(公告)号：US20230093897A1

公开(公告)日：2023-03-30

申请号：US17707015

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KYUNGSOO KIM ,  KYENHEE LEE

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8238

Abstract: An integrated circuit semiconductor element includes: a substrate; a complementary field effect transistor (FET) (cFET) formed over the substrate and having a quadruple-gate structure, in which nano sheet stacked structures are sequentially stacked; and a planar FET having a mono-gate structure or a zebra fin FET (ZE FINFET) having a triple-gate structure, which are formed over the substrate.