公开(公告)号：US20230045892A1

公开(公告)日：2023-02-16

申请号：US17969959

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNSOO CHO ,  DONG-MIN KIM ,  KYOUNG BACK LEE

IPC: G06F3/06

Abstract: A storage device including: a nonvolatile memory device including a first, second and third area; and a controller to receive a first write command including a first logical block address from a host, to receive first data corresponding to the first logical block address in response to the first write command, and store the first data in the nonvolatile memory device, when the first write command includes area information, the controller stores the first data in the first area or the second area based on the area information, when the first write command does not include the area information, the controller stores the first data. in the third area, each of the first area and the second area includes memory cells each storing “n” bits (n being a positive integer), and the third area includes memory cells each storing “m” bits (m being a positive integer greater than n).

公开(公告)号：US20210034298A1

公开(公告)日：2021-02-04

申请号：US16903700

申请日：2020-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SONGHO YOON ,  DONG-MIN KIM ,  YOUNGMOON KIM ,  JEONG-WOO PARK ,  KYOUNG BACK LEE

IPC: G06F3/06

Abstract: A storage device includes a nonvolatile memory device that includes a first region including memory cells configured to store n-bit data and a second region including memory cells configured to store m-bit data and a memory controller, where n and m are natural numbers and n is less than m. The first region includes a first area and a second area, and the second region includes a third area. The memory controller is configured to perform one of a turbo write operation on the first area or the second area and a normal write operation on the third area, and configured to perform one of a turbo read operation on the first area or the second area and a normal read operation on the third area.

公开(公告)号：US20230072721A1

公开(公告)日：2023-03-09

申请号：US18055133

申请日：2022-11-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONG-WOO PARK ,  DONG-MIN KIM ,  YOUNGMOON KIM ,  KYOUNG BACK LEE

IPC: G06F3/06

Abstract: A storage device that includes a nonvolatile memory device is described. The storage device includes areas and a controller. The controller receives a write command and data from an external host device. The controller then preferentially writes the data in an area associated with a turbo write based on a turbo write policy, or in an area not associated with a turbo write based on a normal write policy. The controller also receives a move command from the external host device and moves data stored in the area to a different area based on the move command.

公开(公告)号：US20210034285A1

公开(公告)日：2021-02-04

申请号：US16901332

申请日：2020-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-WOO KIM ,  SONGHO YOON ,  JEONG-WOO PARK ,  DONG-MIN KIM ,  KYOUNG BACK LEE

IPC: G06F3/06

Abstract: A memory system includes a storage device including a turbo write buffer and a user storage area implemented with a nonvolatile memory, and a host configured to transfer a read request to the storage device. In response to the read request, the storage device transfers read data and read data information including attributes of the read data to the host.

公开(公告)号：US20220083249A1

公开(公告)日：2022-03-17

申请号：US17369884

申请日：2021-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DAE JIN JUNG ,  DONG-MIN KIM ,  JEONG-WOO PARK ,  KYOUNG BACK LEE

IPC: G06F3/06

Abstract: A memory system includes a host device including a host controller, and a memory device including a device controller and a non-volatile storage including a purge region and a memory region. The device controller communicates purge information associated with the purge region and including size information of the purge region. The host controller communicates a request for generating a first partition for a first logical unit in the memory region, and communicates a request for generating a second partition for a second logical unit in the purge region in response to the size information of the purge region.

公开(公告)号：US20210034300A1

公开(公告)日：2021-02-04

申请号：US16943268

申请日：2020-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNSOO CHO ,  DONG-MIN KIM ,  KYOUNG BACK LEE

IPC: G06F3/06

Abstract: A storage device including: a nonvolatile memory device including a first, second and third area; and a controller to receive a first write command including a first logical block address from a host, to receive first data corresponding to the first logical block address in response to the first write command, and store the first data in the nonvolatile memory device, when the first write command includes area information, the controller stores the first data in the first area or the second area based on the area information, when the first write command does not include the area information, the controller stores the first data in the third area, each of the first area and the second area includes memory cells each storing “n” bits (n being a positive integer), and the third area includes memory cells each storing “m” bits (m being a positive integer greater than n).