公开(公告)号：US20240274629A1

公开(公告)日：2024-08-15

申请号：US18410059

申请日：2024-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kooktae KIM

IPC: H01L27/146 ,  H04N25/63

CPC classification number: H01L27/14623 ,  H01L27/14645 ,  H04N25/63

Abstract: An image sensor includes a substrate having a pixel separation recess, a plurality of photo-sensing elements arranged in the substrate, and a pixel separation region filling the pixel separation recess, wherein the pixel separation region includes a first insulating layer covering an inner wall of the pixel separation recess, a first conductive layer covering at least a portion of a side surface of the first insulating layer within the pixel separation recess, a second insulating layer covering a portion of a side surface of the first conductive layer within an inner space defined by the first conductive layer, and a second conductive layer filling all of a space not filled by the second insulating layer from among the inner space defined by the first conductive layer, and connected to and in contact with the first conductive layer.

公开(公告)号：US20240204025A1

公开(公告)日：2024-06-20

申请号：US18526404

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byeongtaek BAE ,  Seunghwi YOO ,  Kooktae KIM ,  Jingyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14683

Abstract: Provided is an image sensor including a substrate including a first photoelectric conversion region, and an isolation region arranged in the substrate vertically from the first surface and defining the first photoelectric conversion region, wherein the isolation region includes a first semiconductor pattern conformally covering an inner wall of a trench, an insulating film conformally covering an inner wall of the first semiconductor pattern, a second semiconductor pattern conformally covering an inner wall of a lower portion of the insulating film, and a conductive pattern covering an inner wall of an upper portion of the insulating film and an uppermost surface and an inner wall of the second semiconductor pattern, wherein a vertical distance from the first surface to the uppermost surface of the first semiconductor pattern is substantially the same as a vertical distance from the first surface to the uppermost surface of the conductive pattern.

公开(公告)号：US20240222408A1

公开(公告)日：2024-07-04

申请号：US18512600

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyeon NOH ,  Seunghwi YOO ,  Kooktae KIM ,  Jingyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14603

Abstract: An image sensor may include a substrate; a unit pixel region including a photoelectric conversion region; a pixel isolation trench defining the unit pixel region, and extending in a first and a second horizontal direction; and a pixel isolation structure in the pixel isolation trench, wherein the pixel isolation structure includes a dielectric layer on an inner wall of the pixel isolation trench; a first semiconductor pattern on the dielectric layer and including a first dopant; a first insulating layer on a first portion of the first semiconductor pattern overlapping the photoelectric conversion region; a second semiconductor pattern on a second portion of the first semiconductor pattern not overlapping with the photoelectric conversion region, wherein the photoelectric conversion region includes a doped region on an outer wall of the pixel isolation structure, and the doped region includes the first dopant.

公开(公告)号：US20230215892A1

公开(公告)日：2023-07-06

申请号：US18086257

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kooktae KIM ,  Jingyun KIM ,  Jonghyeon NOH ,  Miseon PARK ,  Jaewoong LEE

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  G02B5/201

Abstract: An image sensor includes a pixel division structure, a light sensing element, a color filter array layer and a microlens. The pixel division structure extends through a substrate in a vertical direction, and defines unit pixel regions. The light sensing element is in each unit pixel region. The color filter array layer including color filters is on the substrate. The microlens is on the color filter array layer. The pixel division structure includes a core and a lateral pattern structure on a sidewall thereof. The core includes a first filling pattern including polysilicon doped with impurities at a first concentration and a second filling pattern in a space formed by the first filling pattern. A sidewall of the second filling pattern is covered by the first filling pattern, and the second filling pattern includes polysilicon doped with impurities at a second concentration different from the first concentration.