公开(公告)号：US20230035988A1

公开(公告)日：2023-02-02

申请号：US17872180

申请日：2022-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINHO KIM ,  WIJIK LEE

IPC: G06F3/06 ,  H04L9/00

Abstract: A storage device includes a non-volatile memory, and a memory controller, wherein the memory controller encrypts plaintext to generate a homomorphic ciphertext with a first level among homomorphic ciphertexts with different levels, stores the homomorphic ciphertext with the first level in the non-volatile memory, and provides the homomorphic ciphertext with the first level in response to a request received from a host. The homomorphic ciphertext with the first level has a smallest length among the homomorphic ciphertexts with different levels.

公开(公告)号：US20230189519A1

公开(公告)日：2023-06-15

申请号：US17898816

申请日：2022-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： MINHO KIM ,  KYUNGSOO KIM

IPC: H01L27/11529 ,  H01L27/11 ,  H01L27/11524

CPC classification number: H01L27/11529 ,  H01L27/1116 ,  H01L27/11524

Abstract: A storage device includes a first semiconductor structure having a first cell area, with memory cells disposed on a first semiconductor substrate, and a first metal pad disposed above the first cell area. A second semiconductor structure has a peripheral circuit area on a second semiconductor substrate and on which peripheral circuits are disposed, a second cell area including a plurality of second memory cells, and a second metal pad bonded to the first metal pad. A third semiconductor structure includes a memory controller disposed on a third semiconductor substrate and connected to a third metal pad through a connection via penetrating through the third semiconductor substrate. A connection structure penetrates through the second semiconductor substrate and connects the memory controller to the second semiconductor structure. The memory controller controls the first and second cell areas based on a signal applied from a host through the third metal pad.