公开(公告)号：US11616170B2

公开(公告)日：2023-03-28

申请号：US16940879

申请日：2020-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun Kim ,  Dongmyung Shin ,  Minho Kim ,  Minwook Choi

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/42

Abstract: A light emitting device may include a light emitting structure, a transparent electrode, a first insulation layer, a first electrode, a second insulation layer and a second electrode. The light emitting structure may include a first semiconductor layer, an activation layer and a second semiconductor layer sequentially stacked. The transparent electrode may be formed on an upper surface of the second semiconductor layer. The transparent electrode may have at least one opening. The first insulation layer may be formed on an upper surface of the transparent electrode to fill the at least one opening. The first electrode may be formed on an upper surface of the first insulation layer. The first electrode may include a contact extending through the first insulation layer and connected with the transparent electrode. The second insulation layer may be formed on an upper surface of the first electrode. The second electrode may be formed on an upper surface of the second insulation layer. The second electrode may be electrically connected with the first semiconductor layer.

公开(公告)号：US20210217929A1

公开(公告)日：2021-07-15

申请号：US16940879

申请日：2020-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehun Kim ,  Dongmyung Shin ,  Minho Kim ,  Minwook Choi

IPC: H01L33/38 ,  H01L33/44

Abstract: A light emitting device may include a light emitting structure, a transparent electrode, a first insulation layer, a first electrode, a second insulation layer and a second electrode. The light emitting structure may include a first semiconductor layer, an activation layer and a second semiconductor layer sequentially stacked. The transparent electrode may be formed on an upper surface of the second semiconductor layer. The transparent electrode may have at least one opening. The first insulation layer may be formed on an upper surface of the transparent electrode to fill the at least one opening. The first electrode may be formed on an upper surface of the first insulation layer. The first electrode may include a contact extending through the first insulation layer and connected with the transparent electrode. The second insulation layer may be formed on an upper surface of the first electrode. The second electrode may be formed on an upper surface of the second insulation layer. The second electrode may be electrically connected with the first semiconductor layer.