公开(公告)号：US20240371927A1

公开(公告)日：2024-11-07

申请号：US18776491

申请日：2024-07-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seulki Hong ,  Hyungjong Lee ,  Moongi Cho ,  Myungsoo Noh ,  Sunghwan Bae ,  Jeonglim Kim

IPC: H01L29/06 ,  H01L27/088

Abstract: A semiconductor device includes a substrate; a guard ring disposed on the substrate and adjacent to an edge of the substrate; an integrated circuit structure surrounded by the guard ring and disposed on the substrate; and an insulating material structure disposed on a side surface of the guard ring, and wherein the guard ring includes a plurality of guard active structures on the substrate, a plurality of guard contact structures disposed on each of the plurality of guard active structures, and a guard interconnection structure disposed on a pair of guard contact structures adjacent to each other, among the plurality of guard contact structures, wherein each of the plurality of guard active structures includes a plurality of guard active fins spaced apart from each other.

公开(公告)号：US11152359B2

公开(公告)日：2021-10-19

申请号：US16929269

申请日：2020-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonglim Kim ,  Sunghwan Bae ,  Seulki Hong ,  Myungsoo Noh ,  Moongi Cho

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/417

Abstract: An integrated circuit device includes: a substrate including a fin type active region extending in a first direction; a gate structure intersecting the fin type active region and extending in a second direction perpendicular to the first direction; a source/drain region on sides of the gate structure; a gate isolation insulating layer contacting an end of the gate structure; a first contact connected to the source/drain region; and a second contact connected to the source/drain region, the second contact being longer in the second direction than the first contact, the second contact includes a first portion extending in the second direction from an area adjacent to one side of the gate structure beyond the end of the gate structure and facing a sidewall of the gate structure, and a second portion facing a sidewall of the gate isolation insulating layer, and the first portion is wider than the second portion.