公开(公告)号：US20210013212A1

公开(公告)日：2021-01-14

申请号：US17037851

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sub KIM ,  Hui Jung KIM ,  Myeong Dong LEE ,  Jin Hwan CHUN

IPC: H01L27/108 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, a first impurity implantation region and a second impurity implantation region on the substrate and spaced apart from each other, a storage node contact in contact with the first impurity implantation region, the storage node contact including an upper contact having a first width, and a lower contact having a second width that is greater than the first width at a lower portion of the upper contact, a bit line electrically connected to the second impurity implantation region and configured to cross the substrate, a bit line node contact between the bit line and the second impurity implantation region, and a spacer between the storage node contact and the bit line and between the storage node contact and the bit line node contact.