公开(公告)号：US20250165332A1

公开(公告)日：2025-05-22

申请号：US18807266

申请日：2024-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myeonghun KIM ,  Taesun PARK ,  Suckhyun NAM ,  Iksung PARK ,  Hunglae EUN

IPC: G06F11/07 ,  G06F1/30

Abstract: Disclosed is a storage device which includes a memory device, a power supply port that receives a first external power voltage from a host device, a power supply circuit that receives the first external power voltage from the power supply port and generates a first internal power voltage based on the first external power voltage, a monitoring circuit that receives the first external power voltage from the power supply port and generates a first power-on-reset signal based on monitoring the first external power voltage, and a storage controller configured to control the memory device. The storage controller is driven based on the first internal power voltage and the first power-on-reset signal, and the monitoring circuit detects a voltage drop in the first power-on-reset signal transmitted from the monitoring circuit to the storage controller and provides an error detection signal to the storage controller in response to detecting the voltage drop.