公开(公告)号：US20250140559A1

公开(公告)日：2025-05-01

申请号：US18402474

申请日：2024-01-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nikhil SIVADAS ,  Yongwoo SHIN

IPC: H01L21/22 ,  H01L21/225

Abstract: A structure includes a dopant layer at or close to a channel to n-dope TMDs, wherein the dopant layer includes at least one of: at least one of halides (MX2; M=(Ti, Zr, or Hf), X=at least one of {Cl, Br, or I}); at least one of hydroxides (M(OH)2; M=(Ru, Os, or Ni)); Ca4As4; or Zn2H8N4Te2. A method for fabricating a channel includes depositing a delta-doped layer having a low dielectric constant and a band gap>0.1 eV onto a high-k layer, and n-doping a TMD layer, wherein an absolute value of ionization energy of the delta-doped layer is less than an absolute value of the electron affinity of the TMD layer, the delta-doped layer includes one of a halide, hydroxide, chalcogenide, oxide, arsenide, or multi-anion compound, and a fractional ratio of the delta-doped layer to the high-k layer is 0 to 0.3.